| Zugriffsnummer | 11112 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Crosstalk in product related bus systems using 110 nm CMOS technology |
| Autor(in); Institution |
Ktata, M. F.; Universität Hannover, Laboratorium für Informationstechnologie, Hannover, GERMANY
Grabinski, Hartmut; Universität Hannover, Laboratorium für Informationstechnologie, Hannover, GERMANY
Arz, Uwe; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Fischer, H.; Infineon Technologies, Memory Products Division, München, GERMANY
|
| Quelle/Jahr | 8th IEEE Workshop on Signal Propagation on Interconnects: proceedings:(2004), 85 - 88 |
| Herausgeber(in) |
IEEE - CPMT Society
|
| ISBN | 0-7803-8470-9 |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | 8th IEEE Workshop on Signal Propagation on Interconnects, Heidelberg, 9-12, May, 2004, Germany |
| Freie Schlagworte | cross talk ; time-domain signals ; ground line position ; substrate effects ; on-wafer measurements |
| Zusammenfassung | The influence of the ground line position on the signal shape in the time domain is investigated in the presence of grounded substrates with different conductivities of 10 S/m (low) and 100 S/m (medium). It is shown that the impact of substrate effects on time domain signals depends on the substrate conductivity, on the relative position of the ground line with respect to the signal lines as well as on the length of the line system. In addition, the impact of process-related generated voids between closely spaced signal lines on crosstalk is investigated, too. |
