Zugriffsnummer 10800
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Polaronic effects in optical transitions of single InAs/AlAs quantum dots
Autor(in); Institution
Sarkar, Dipankar; Universidad Autónoma de Madrid, Departamento de Physica de Materiales, Cantoblanco, SPAIN
Van der Meulen, H. P.; Universidad Autónoma de Madrid, Departamento de Physica de Materiales, Cantoblanco, SPAIN
Calleja, J. M.; Universidad Autónoma de Madrid, Departamento de Physica de Materiales, Cantoblanco, SPAIN
Becker, J. M.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Haug, Rolf J.; Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Quelle/Jahr Physics of semiconductors : 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004. Part A:(2005), 715 - 716
Schriftenreihe AIP conference proceedings: 772,A
Herausgeber(in)
Menéndez, José
ISBN 0-7354-0257-4
Verlag Melville, NY: American Inst. of Physics
Konferenzangaben 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30, July, 2004, USA
Freie Schlagworte photoluminescence ; single quantum dots ; micro photoluminescence ; InAs ; quantum dots
Zusammenfassung Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above appr. 1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.

Zitierung

Sarkar, D., Van der Meulen, H. P., Calleja, J. M., Becker, J. M., Haug, R. J., & Pierz, K. (2005). Polaronic effects in optical transitions of single InAs/AlAs quantum dots. 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, 26-30, July, 2004, USA.

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