| Zugriffsnummer | 10539 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | TEM investigation of the effect of low-temperature interlayers on the properties of GaN layers grown on sapphire |
| Autor(in); Institution |
Ade, George; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Proceedings of the 13th European Microscopy Congress : Materials sciences: 2 (2004), 187 - 188 [print ed.]; [CD-ROM] file name: papers\\MS03.P01.pdf |
| Herausgeber(in) |
Tendeloo, Gustaaf van
|
| Verlag | Liège: Belgian Society for Microscopy |
| Konferenzangaben | 13th European Microscopy Congress, Antwerp, 22-27, August, 2004, Belgium |
| Freie Schlagworte | GaN films ; Interlayers ; defect density ; strain field |
| Zusammenfassung | The strain relaxation and the nature of structural defects in low-temperature interlayers are investigated in order to gain an insight into the defect reduction process in GaN films grown on sapphire. The experimental results show that many threading dislocations change their line direction when crossing the interface or tend to bend within the interlayers or close to their interfaces. A reduction of the defect density in subsequent GaN layers can thus be attributed to an enhanced relaxation of the existing strain field and to an increased probability of interaction between dislocations. |
