Zugriffsnummer 10069
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Broadband impedance parameters of asymmetric coupled CMOS interconnects: new closed-form expressions and comparison with measurements
Autor(in); Institution
Luoh, Amy; Oregon State University, Department of Electrical and Computer Engineering, Corvallis, OR, USA
Arz, Uwe; 2.22, Hochfrequenzmesstechnik, PTB-Braunschweig
Grabinski, Hartmut; University of Hannover, Laboratory of Information Technology, Hannover, GERMANY
Williams, Dylan F.; National Institute of Standards and Technology (NIST), Boulder, Colorado, USA
Walker, David K.; National Institute of Standards and Technology (NIST), Boulder, Colorado,USA
Weisshaar, Andreas; Oregon State University, Department of Electrical and Computer Engineering, Corvallis, OR, USA
Quelle/Jahr 7th IEEE Workshop on Signal Propagation on Interconnects: proceedings:(2003), 7 - 10
ISBN 0-7803-7051-1
Verlag Piscataway, NJ: IEEE
Konferenzangaben 7th IEEE Workshop on Signal Propagation on Interconnects, Siena, 11-14, May, 2003, Italy
Freie Schlagworte closed-form expressions ; frequency-dependent impedance parameters ; asymmetric coupled CMOS lines ; on-wafer coupled-line measurement ; skin and proximity effects
Zusammenfassung New broadband closed-form expressions for the frequency-dependent impedance parameters of asymmetric coupled coplanar interconnects on a conductive silicon substrate are presented. The closed-form expressions are based on a complex image approach that accounts for eddy-current loss in the substrate and incorporates the effect of substrate contacts in the ground lines. The closed-form expressions for asymmetric coupled interconnects fabricated in a CMOS process generally agree well with measurements. To further investigate small differences between the model and measurement results, we also examined the importance of skin and proximity effects in the closely spaced conductors.

Zitierung

Luoh, A., Arz, U., Grabinski, H., Williams, D. F., Walker, D. K., & Weisshaar, A. (2003). Broadband impedance parameters of asymmetric coupled CMOS interconnects: new closed-form expressions and comparison with measurements. 7th IEEE Workshop on Signal Propagation on Interconnects, Siena, 11-14, May, 2003, Italy.

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