| Zugriffsnummer | 10001 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Metallic single-electron transistor without traditional tunnel barriers |
| Autor(in); Institution |
Krupenin, V. A.; Moscow State University, Laboratory of Cryoelectronics, Moscow, RUSSIA
Zorin, Alexander B.; 2.42, Metallische Strukturen, PTB-Braunschweig
Presnov, D. E.; Moscow State University, Nuclear Physics Institute, Moscow, RUSSIA
Savvateev, M. N.; Moscow State University, Laboratory of Cryoelectronics, Moscow, RUSSIA
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Physics: Uspekhi: 171 (2001), 10, 113 - 116 |
| ISSN | 1063-7869 |
| Verlag | Moscow: Uspekhi Fizicheskikh Nauk |
| Freie Schlagworte | correlated electron transport ; thin film resistors |
| Zusammenfassung | We report a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips ( ≈ 1 μm-long) connecting a 1 μm-long Al island to two Al outer electrodes. These resistors substitute small-area oxide tunnel junctions of traditional SET. Our transistor with total asymptotic resistance of 110 kΩ demonstrated very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages Vg . In the Coulomb blockade region ( V ≤ about 0.5 mV), we observed a strong suppression of the co-tunneling current allowing appreciable modulation curves V(Vg) to be measured currents I as low as 100 fA. The noise figure of our SET was found to be similar to that of typical Al/AlOx/Al single-electron transistores, viz. δQ ≈ 5 × 10-4e/√Hz at 10 Hz. |
